| | |
| Ionization Energies for Various Dopants | |
| Structure | Cubic |
| Space Group | Fd3m |
| Atomic weight | 28.0855 |
| Lattice spacing (a0 ) at 300K | 0.54311 nm |
| Density at 300K | 2.3290 g/ cm3 |
| Nearest Neighbour Distance at 300K | 0.235 nm |
| Number of atoms in 1 cm3 | 4.995 · 1022 |
| Isotopes | 28 (92.23%) 29 ( 4.67%) 30 ( 3.10%) |
| Electron Shells | 1s22s22p63s23p2 |
| Common Ions | Si 4 +, Si 4 - |
| Critical Pressure | 1450 atm |
| Critical Temperature | 4920 °C |
| Dielectric Constant at 300 K | 11.9 |
| Effective density of states (conduction, Nc T=300 K ) | 2.8x1019 cm-3 |
| Effective density of states (valence, Nv T=300 K ) | 1.04x1019 cm-3 |
| Electron affinity | 133.6 kJ / mol |
| Energy Gap Eg (Minimum Indirect Energy Gap) at | 1.12 eV 300 K |
| Energy Gap Eg | at ca. 0 K |
| Minimum Direct Energy Gap at 300 K | 3.4 eV |
| Energy separation (E?L) | 4.2 eV |
| Intrinsic Debye length | 24 um |
| Intrinsic carrier concentration | 1·1010 cm-3 |
| Intrinsic resistivity | 3.2·105 Ohm·cm |
| Auger recombination coefficient Cn | 1.1·10-30 cm6 / s |
| Auger recombination coefficient Cp | 3·10-31 cm6 / s |
| Melting point | 1414 °C/ 1687 K |
| Boiling point | 2628 K |
| Specific heat | 0.7 J / (g x °C) |
| Thermal conductivity [300K] | 148 W / (m x K) |
| Thermal diffusivity | 0.8 cm2/s |
| Thermal expansion, linear | 2.6·10-6 °C -1 |
| Debye temperature | 640 K |
| Temperature dependence of band gap | -2.3e-4 eV/K |
| Heat of: fusion / vaporization / atomization | 39.6 / 383.3 / 452 kJ / mol |
| Breakdown field | ~ 3·105 V/cm |
| Index of refraction | 3.42 |
| Mobility electrons | ~ 1400 cm2 / (V x s) |
| Mobility holes | ~ 450 cm2 / (V x s) |
| Diffusion coefficient electrons | ~ 36 cm2/s |
| Diffusion coefficient holes | ~ 12 cm2/s |
| Electron thermal velocity | 2.3·105 m/s |
| Electronegativity | 1.8 Pauling`s |
| Hole thermal velocity | 1.65·105 m/s |
| Optical phonon energy | 0.063 eV |
| Density of surface atoms | (100) 6.78 1014/cm2 (110) 9.59 1014/cm2 (111) 7.83 1014/cm2 |
| Work function (intrinsic) | 4.15 eV |
| Donors: | Sb 0.039 eV, P 0.045 eV, As 0.054 eV |
| Acceptors: | B 0.045 eV, Al 0.067 eV, Ga 0.072 eV, In 0.16 eV |
