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 Lead compounds (PbS, PbSe and PbTe) are direct bandgap semiconductor materials whose application is confined to infrared detecting and thermal imaging. These semiconductors operate at wavelengths of 1-5.5 µm. They perform well at room temperature but can be cooled if better sensitivity is required. PbTe, PbSe and PbS detectors are widely used in flame detection, combustion control, non-contact temperature measurement, gas and moisture control, spectrophotometry, analytical and medical imaging. |
| Material | PbS | PbSe | PbTe |
| Structure | Cubic (NaCL-type) | | |
| Density | 7.60 g/ cm3 | 8.15 g/ cm3 | 8.16 g/ cm3 |
| Thermal conductivity (at 25 deg C) | 0.03 W/cmK | 0.017 | 0.017 |
| Refractive index (λ= 6 µm) | 4.19 | 4.54 | 5.48 |
| Direct bandgap | 0.37 eV | 0.27 eV | 0.32 eV |
| Max crystal diameter / length | ∅ 38.1×40 mm | ∅25.4×40 mm | ∅25.4×40 mm |
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PbS, PbSe, PbTe rods, wafers and substrates |
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| Diameter/Width | 55 mm |
| Thickness/length | 0.1-30 mm |
| Surface quality | 80/50, 60/40, 40/20 per MIL-0-13830 |
| Orientation | (100) |
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