Miracrys

◊ Sapphire ◊ ZnSe ◊ ZnS ◊ CdSe ◊ CdS ◊ ZnTe ◊ CVD ZnSe ◊ CaF2 ◊ Bi2Te3 ◊ Bi2Se3 ◊ CdWO4 ◊ NaBi(WO4)2 ◊ Langasite & Langatate ◊ LiNbO3 ◊ Fused silica ◊ Silicon ◊ GaSe ◊ PbS, PbSe, PbTe ◊ KDP

16 years of serving high-end industries
with high-quality products

Al₂O₃

EPI-polished substrates suitable for epitaxial growth of various thin films

C-plane 2'' 0.43 mm & 4''x 0.43 mm EPI-polished substrates for GaN applications

R-plane 4''x 0.43 mm EPI-polished substrates for SOS applications

C-plane+0.2 deg off, 2''x 0.43 mm EPI-polished substrates for GaN applications

R-plane, EPI-polished 150x0.625 mm substrates for SOS applications

Specs:


Diameter	2?-6?
Thickness	0.3 ? 5 mm
Orientation	M, A, R, C
Material quality	Grades 2-4, chemical admixture?s concentrations, rocking curves
Surface quality	EPI-polished (Ra<0.3 nm) suitable for epitaxial growth
Package	Vacuum sealed in 25 wafers EMPAK container in Clean Room conditions

Please contact our Sales Department to enquire about the current prices.
All your requests will be processed immediately.

Ingots of optical, technical & watch quality up to 240 mm in diameter

Ribbons up to 70 mm in width and up to 500 mm in length

Tubes/Crucibles/Rods with OD from 1 mm to 85 mm in diameter and length up to...

As-cut, fine-ground or lapped blanks, wafers

2?, 3?, 4? Wafer-carriers

SOS (Epitaxially grown Silicon on R-plane Sapphire) structures

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e-mail: sales@miracrys.com, miracrys.sales@gmail.com Copyright “Miracrys” © 2002-2025